cystech electronics corp. spec. no. : c433e3 issued date : 2010.07.15 revised date : 2013.04.29 page no. : 1/7 MTN2510E3 cystek product specification n-channel enhancement mode power mosfet MTN2510E3 bv dss 100v i d 50a r dson(typ) @ v gs =10v, i d =30a 17m features ? low gate charge ? simple drive requirement ? repetitive avalanche rated ? fast switching characteristic ? rohs compliant package symbol outline MTN2510E3 to-220 g gate d drain s source absolute maximum ratings (t c =25 c, unless otherwise noted) parameter symbol limits unit drain-source voltage v ds 100 gate-source voltage v gs 30 v continuous drain current @ t c =25 c i d 50 continuous drain current @ t c =100c i d 35 pulsed drain current (note 1) i dm 150 avalanche current i as 30 a avalanche energy @ l=0.1mh, i d =30a, r g =25 e as 45 repetitive avalanche energy@ l=0.05mh (note 2) e ar 22.5 mj t c =25 c 155 power dissipation p d w t c =100 c 61 operating junction and storage temperature tj, tstg -55~+175 c note : 1. pulse width limited by maximum junction temperature 2. duty cycle 1%
cystech electronics corp. spec. no. : c433e3 issued date : 2010.07.15 revised date : 2013.04.29 page no. : 2/7 MTN2510E3 cystek product specification thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 0.97 c/w thermal resistance, junction-to-ambient, max r th,j-a 62.5 c/w characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 100 - - v v gs =0v, i d =250 a v gs(th) 1.5 2.4 4.0 v v ds = v gs , i d =250 a g fs - 38 - s v ds =5v, i d =30a i gss - - 100 na v gs = 30 - - 1 a v ds =80v, v gs =0v i dss - - 25 a v ds =70v, v gs =0v, tj=125 c *r ds(on) - 17 30 m v gs =10v, i d =30a *i d(on) 50 - - a v ds =10v, v gs =10v dynamic *qg - 25 - *qgs - 6.1 - *qgd - 9.2 - nc i d =30a, v ds =50v, v gs =10v *t d(on) - 19 - *tr - 67 - *t d(off) - 75 - *t f - 34 - ns v ds =50v, i d =1a, v gs =10v, r g =6 ciss - 1888 - coss - 236 - crss - 124 - pf v gs =0v, v ds =25v, f=1mhz rg - 2 - v gs =15mv, v ds =0v, f=1mhz source-drain diode *i s - - 50 *i sm - - 150 a *v sd - 0.88 1.3 v i f =i s , v gs =0v *trr - 120 - ns *qrr - 380 - nc i f =25a, v gs =0, di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping MTN2510E3-0-ub-s to-220 (pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton
cystech electronics corp. spec. no. : c433e3 issued date : 2010.07.15 revised date : 2013.04.29 page no. : 3/7 MTN2510E3 cystek product specification typical characteristics typical output characteristics 0 30 60 90 120 150 024681 0 brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v v ds , drain-source voltage(v) i d , drain current (a) 10v,9v,8v,7v,6v v gs =5v v gs =4v v gs =3v static drain-source on-state resistance vs drain current 10 100 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =4.5v v gs =10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 40 80 120 160 200 024681 0 drain-source on-state resistance vs junction tempearture 0 0.4 0.8 1.2 1.6 2 2.4 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =30a r ds( on) @tj=25c : 17m v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =30a
cystech electronics corp. spec. no. : c433e3 issued date : 2010.07.15 revised date : 2013.04.29 page no. : 4/7 MTN2510E3 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 180 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) ta=25c pulsed v ds =5v gate charge characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =30a v ds =50v v ds =20v maximum safe operating area 0.01 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) t c =25c, tj=175c v gs =10v, jc =0.97c/w single pulse dc 100 m s r dson limited 1s 100 s 1ms 10ms maximum drain current vs case temperature 0 10 20 30 40 50 60 25 50 75 100 125 150 175 200 t c , case temperature(c) i d , maximum drain current(a) v gs =10v, r jc =0.97c/w
cystech electronics corp. spec. no. : c433e3 issued date : 2010.07.15 revised date : 2013.04.29 page no. : 5/7 MTN2510E3 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 20 40 60 80 100 120 140 024681012 v gs , gate-source voltage(v) i d , drain current(a) v ds =5v single pulse maximum power dissipation 0 500 1000 1500 2000 2500 3000 0.01 0.1 1 10 100 1000 pulse width(s) power (w) t j(max) =175c t c =25c jc =0.97c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r jc (t)=r(t)*r jc 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *r jc (t) 4.r jc =0.97c/w
cystech electronics corp. spec. no. : c433e3 issued date : 2010.07.15 revised date : 2013.04.29 page no. : 6/7 MTN2510E3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds 183 c 60-150 seconds time maintained above: ? temperature (t l ) 217 c ? time (t l ) 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c433e3 issued date : 2010.07.15 revised date : 2013.04.29 page no. : 7/7 MTN2510E3 cystek product specification to-220 dimension *: typical millimeters inches millimeters inches dim min. max. min. max. marking: cys n2510 1 2 3 device name date code style: pin 1.gate 2.drain 3.source 4.drain 3-lead to-220 plastic package cystek package code: e3 dim min. max. min. max. a 4.470 4.670 0.176 0.184 e1 12.060 12.460 0.475 0.491 a1 2.520 2.820 0.099 0.111 e 2.540* 0.100* b 0.710 0.910 0.028 0.036 e1 4.980 5.180 0.196 0.204 b1 1.170 1.370 0.046 0.054 f 2.590 2.890 0.102 0.114 c 0.310 0.530 0.012 0.021 h 0.000 0.300 0.000 0.012 c1 1.170 1.370 0.046 0.054 l 13. 400 13.800 0.528 0.543 d 10.010 10.310 0.394 0.406 l1 3.560 3.960 0.140 0.156 e 8.500 8.900 3.735 3.935 0.147 0.155 0.335 0.350 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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